Kodera Laboratory
Publications
Journal articles and international conference contributions from 2009 onward. Browse by year; publication titles and author lists follow the original records.
2026
Journal articles
Appl. Phys. Lett., 128, 224002-1-6 (2026)
Improved readout accuracy of a silicon spin qubit via log-likelihood ratio
Jpn. J. Appl. Phys., 65, 02SP03 (2026)
Multi-bit state discrimination using machine learning for IQ-encoded spin-qubit readout
Jpn. J. Appl. Phys., 65, 05SP22 (2026)
Active Silicon Interposer with Integrated CMOS Selector Circuits for Silicon qubits
Jpn. J. Appl. Phys., 65, 03SP19 (2026)
International conferences
Verification of the Versatility of Triple-Point Detection in Semiconductor Qubits Using Machine Learning-Based Image Recognition
The 15th Workshop on Semiconductor/Superconductor Quantum Coherence Effects and Quantum Information, Nasu, Japan, September 30, 2026
Theoretical Study of a Two-Qubit SWAP Gate under Modulated Microwave Driving in Semiconductor Spin Qubits
The 15th Workshop on Semiconductor/Superconductor Quantum Coherence Effects and Quantum Information, Nasu, Japan, September 30, 2026
Pauli spin blockade readout and two-component decay dynamics in a Si-MOS double quantum dot
The 15th Workshop on Semiconductor/Superconductor Quantum Coherence Effects and Quantum Information, Nasu, Japan, September 30, 2026
Fundamentals and progress of semiconductor spin qubit technology
International Conference on Solid State Devices and Materials(SSDM), Nagasaki, Japan, September 14, 2026 — Invited
Active Silicon Interposer with Integrated CMOS ADCs for Cryogenic In Situ Waveform Monitoring of Silicon Spin Qubits
2026 International Conference on Solid State Devices and Materials, Nagasaki, Japan, September 15, 2026
Characterization of Nonlinear Capacitance in sGe/SiGe Heterostructures for Parametric Amplification
International Workshop on Quantum Dot Technology (InQuot) 2026, Tokyo, Japan, August 24, 2026
Detuning-Dependent Multicomponent Relaxation in a Si-MOS Double Quantum Dot
International Workshop on Quantum Dot Technology (InQuot) 2026, Tokyo, Japan, August 24, 2026
Circuit Design and Signal Simulation for IQ-Encoded Baseband Readout of Silicon Qubits
International Workshop on Quantum Dot Technology (InQuot) 2026, Tokyo, Japan, August 24, 2026
Image Recognition Using the Frangi Method in Double Quantum Dots
International Workshop on Quantum Dot Technology (InQuot) 2026, Tokyo, Japan, August 24, 2026
Evaluation of RF Reflectometry Single-Shot Charge Detection and Pauli Spin Blockade lifetime of p-type Silicon Quantum Dots Toward High Fidelity Spin Readout
International Workshop on Quantum Dot Technology (InQuot) 2026, Tokyo, Japan, August 24, 2026
Enhancing the Coherence of a Silicon Hole Spin Qubit via Phase-Modulated Concatenated Continuous Driving
International Workshop on Quantum Dot Technology (InQuot) 2026, Tokyo, Japan, August 24, 2026
Cryogenic Characterization of SiGe Heterojunction Bipolar Transistors toward Silicon Spin-Qubit Readout
International Workshop on Quantum Dot Technology (InQuot) 2026, Tokyo, Japan, August 24, 2026
Classification of IQ-Encoded Multi-Qubit Measurements Using Machine Learning
International Workshop on Quantum Dot Technology (InQuot) 2026, Tokyo, Japan, August 24, 2026
Trap Densities in Ge/SiGe-Based Quantum Devices
International Workshop on Quantum Dot Technology (InQuot) 2026, Tokyo, Japan, August 24, 2026
Single-Tone IQ-encoded RF reflectometry of multiple silicon quantum dots
International Workshop on Quantum Dot Technology (InQuot) 2026, Tokyo, Japan, August 24, 2026
Fundamental Technology Research toward the Integration of Semiconductor Spin Qubits
Solid State Systems for Quantum Information Processing International Workshop (SQuIP 2026), Okinawa, Japan, June 11, 2026
2025
Journal articles
Jpn. J. Appl. Phys., 64, 076503 (2025)
Quantum algorithm compiler for architectures with semiconductor spin qubits
EPJ Quantum Technology, 12, 81 (2025)
APL Mach. Learn., 3, 016114 (2025)
Single-electron charge sensor self-aligned to a quantum dot array by double-gate patterning process
Jpn. J. Appl. Phys., 64, 011001 (2025)
Spin-blockade and state lifetimes of many-hole spin states in silicon quantum dots
Jpn. J. Appl. Phys., 64, 01SP09 (2025)
Appl. Phys. Express, 18, 015001 (2025)
Appl. Phys. Lett., 126, 094001 (2025)
International conferences
Log-likelihood ratio test for improving accuracy in silicon spin qubit readout
1st International Workshop on Industrial-grade Ge Quantum Technology (InGeQT workshop 2025), Osaka, Japan, December 16, 2025
Evaluation of Ge/SiGe Heterostructure's Nonlinear Capacitance for Parametric Amplification
1st International Workshop on Industrial-grade Ge Quantum Technology (InGeQT workshop 2025), Osaka, Japan, December 15, 2025
Exploring Ge/SiGe Heterostructure's Nonlinear Capacitance for Parametric Amplification
The 14th Workshop on Semiconductor/Superconductor Quantum Coherence Effect and Quantum Information, Nasu, Japan, September 29-October 1 (2025)
Cryogenic Characterization of Commercial Heterojunction Bipolar Transistors as Current Amplifiers Toward Semiconductor Spin Qubit Readout
1st International Workshop on Industrial-grade Ge Quantum Technology (InGeQT workshop 2025), Osaka, Japan, December 16, 2025
Concatenated Continuous Driving for Coherence Time Enhancement of a Silicon Hole Spin Qubit
1st International Workshop on Industrial-grade Ge Quantum Technology (InGeQT workshop 2025), Osaka, Japan, December 15, 2025
Progress of fabrication and characterization of double quantum dots on a Leti Ge wafer
1st International Workshop on Industrial-grade Ge Quantum Technology (InGeQT workshop 2025), Osaka, Japan, December 15, 2025
A Study on High-Frequency Techniques for the Integration of Germanium Hole Spin Qubits
1st International Workshop on Industrial-grade Ge Quantum Technology (InGeQT workshop 2025), Osaka, Japan, December 15, 2025
Log-Likelihood Ratio for Improving Accuracy in Silicon Spin Qubit Readout
2nd International Workshop on Quantum Information Engineering (QIE2025), Okinawa, Japan, October 8-10 (2025)
Coherent Control of a Silicon Hole Spin Qubit Using Concatenated Continuous Driving
Silicon Quantum Electronics Workshop 2025(SiQEW2025), California, USA, October 6-8 (2025)
Improved readout accuracy of a silicon spin qubit via maximum likelihood estimation
2025 International Conference on Solid Devices and Materials (SSDM2025), Yokohama, Japan, September 15-18 (2025)
Multi-Bit State Classification via Machine Learning in IQ-Encoded Spin Qubit Readout
2025 International Conference on Solid Devices and Materials (SSDM2025), Yokohama, Japan, September 15-18 (2025)
Cryogenic CMOS Selector Circuits for Scalable Signal Routing in Silicon Quantum Processors
2025 International Conference on Solid Devices and Materials (SSDM 2025), Yokohama, Japan, September 15-18 (2025)
Coherent control and concatenated continuous driving of a silicon hole spin qubit at elevated temperatures toward high-fidelity hot spin qubits
The International Symposium on Quantum Science, Technology and Innovation 2025, Osaka, Japan, July 29-Aug.1(2025)
Comparative evaluation of electron- and hole-properties in silicon quantum dots
The International Symposium on Quantum Science, Technology and Innovation 2025, Osaka, Japan, July 29-Aug.1(2025)
Implementation of peripheral technologies for large-scale integration of silicon spin qubits
The International Symposium on Quantum Science, Technology and Innovation 2025, Osaka, Japan, July 29-Aug.1(2025)
Coherence Protection of a Hole Spin Qubit with Concatenated Continuous Driving
The 26th International Conference on Electronic Properties of 2D Systems & the 22nd International Conference on Modulated Semiconductor Structures (EP2DS26 & MSS22), St. Louis, USA, July 27-Aug.1(2025)
Evaluation of pulse-induced shift in the switching characteristics of a two-level fluctuator in a silicon quantum dot
The 14th Workshop on Semiconductor/Superconductor Quantum Coherence Effect and Quantum Information, Nasu, Japan, September 29–October 1 (2025)
2024
Journal articles
On-demand single-electron source via single-cycle acoustic pulses
Phys. Rev. Applied, 21, 024034 (2024)
Suppression of electromagnetic crosstalk by differential excitation for SAW generation
Appl. Phys. Express, 17, 022002 (2024)
Cryogenic flip-chip interconnection for silicon qubit devices
Jpn. J. Appl. Phys., 63, 03SP64 (2024)
Trends and prospects for semiconductor qubit research
JSAP Rev., 240101 (2024)
International conferences
RF reflectometry techniques for enhanced multiplexibility in silicon quantum dots
CEMS Symposium on Quantum Information and Spintronics 2024, Tokyo, Japan
Interplay of Electric Dipole Spin Resonance and Landau-Zener Interference on Hole Spin Resonance
CEMS Symposium on Quantum Information and Spintronics 2024, Tokyo, Japan
Fabrication of Ge quantum devices possessing stable characteristics
CEMS Symposium on Quantum Information and Spintronics 2024, Tokyo, Japan
Proposal of Quantum Circuit Compiler Considering Qubit Connectivity and Addressability with Cross-Device Architecture Evaluation
The 6th International Conference on Spin-Based Quantum Information Processing(SpinQubit6), Sydney, Australia
Coherent control of a hole spin qubit in physically defined silicon quantum dots
International Conference on Physics and Technology of Advanced Materials (ICPTAM 2024), Indonesia
Quantum device fabrication toward germanium hole spin qubits
The 13th Workshop on Semiconductor/Superconductor Quantum Coherence Effect and Quantum Information, Nasu, Japan
Research progress towards qubit operations using silicon hole spins
The 13th Workshop on Semiconductor/Superconductor Quantum Coherence Effect and Quantum Information, Nasu, Japan
Research progress towards precise charge shuttling in silicon quantum dots
The 13th Workshop on Semiconductor/Superconductor Quantum Coherence Effect and Quantum Information, Nasu, Japan
Design and characterization of an inductor-shunted matching circuit for radio-frequency reflectometry of a silicon quantum dot
2024 International Conference on Solid Devices and Materials (SSDM 2024), Hyogo, Japan
Blockade Lifetime of a Multi-hole Spin State in Silicon Quantum Dots
2024 International Conference on Solid Devices and Materials (SSDM 2024), Hyogo, Japan
Asymmetric Hole Spin Resonance Spectrum in Silicon Quantum Dots
2024 International Conference on Solid Devices and Materials (SSDM 2024), Hyogo, Japan
Trends and Prospects of Silicon Quantum Bit Research
2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA)
2023
Journal articles
IEICE Transactions on Electronics, E106-C, No.10, 592-596 (2023)
IEICE Transactions on Electronics, E106-C, No.10, 588-591 (2023)
AIP Advances, 13, 035219 (2023)
Mixed-mode RF reflectometry of quantum dots for reduction of crosstalk effects
Jpn. J. Appl. Phys., 62, SC1086-1-4 (2023)
Coulomb-mediated antibunching of an electron pair surfing on sound
Nature Nanotechnology, 18, 721–726 (2023)
Single-electron pump in a quantum dot array for silicon quantum computers
Jpn. J. Appl. Phys., 62, SC1020 (2023)
International conferences
Bayesian estimation approach for error detection in single-electron manipulation
MRM2023/IUMRS-ICA2023, Kyoto, Japan, December 11-16 (2023)
Trends and prospects of spin qubit research using semiconductor quantum dots
The 25th Takayanagi Kenjiro Memorial Symposium, Hamamatsu, Japan, November 28 (2023)
Interplay of Landau-Zener Interference and Electric Dipole Spin Resonance in Silicon Hole Qubits
Silicon Quantum Electronics Workshop 2023 (SiQEW2023), Kyoto, Japan, October 31-November 2 (2023)
Proposal of a microwave signal evaluation method for high-fidelity cryogenic control
Silicon Quantum Electronics Workshop 2023 (SiQEW2023), Kyoto, Japan, October 31-November 2 (2023)
RF Power Optimization for Charge Noise Characterization of a Silicon Quantum Dot
Silicon Quantum Electronics Workshop 2023 (SiQEW2023), Kyoto, Japan, October 31-November 2 (2023)
A model-based reinforcement learning approach toward auto-tuning of quantum dot devices
The 12th Workshop on Semiconductor/Superconductor Quantum Coherence Effect and Quantum Information, Nasu, Japan, September 27-29 (2023)
Magnetospectroscopy of n-type Si-MOS quantum dots towards hot silicon qubits
The 12th Workshop on Semiconductor/Superconductor Quantum Coherence Effect and Quantum Information, Nasu, Japan, September 27-29 (2023)
Improved spurious of a microwave source using phase-locked-loop reference frequency dependence
The 12th Workshop on Semiconductor/Superconductor Quantum Coherence Effect and Quantum Information, Nasu, Japan, September 27-29 (2023)
Coherent control of a hole spin qubit in physically defined silicon quantum dots
The 12th Workshop on Semiconductor/Superconductor Quantum Coherence Effect and Quantum Information, Nasu, Japan, September 27-29 (2023)
Investigation of 2DHG properties in a Ge/SiGe heterostructure towards stable and efficient qubit control
The 12th Workshop on Semiconductor/Superconductor Quantum Coherence Effect and Quantum Information, Nasu, Japan, September 27-29 (2023)
On-demand Generation of Single Electrons with Acousto-Electric Pulses
The 12th Workshop on Semiconductor/Superconductor Quantum Coherence Effect and Quantum Information, Nasu, Japan, September 27-29 (2023)
Trends and prospects of silicon qubit research
1st International Workshop on Quantum Information Engineering (QIE2023), Okinawa, Japan, October 11-13 (2023)
Crosstalk Effect for Acousto-Electric Quantized Current
2023 International Conference on Solid Device and Materials (SSDM 2023), Nagoya, Japan, September 5-8 (2023)
Cryogenic inter-chip connection for silicon qubit devices
2023 International Conference on Solid Device and Materials (SSDM 2023), Nagoya, Japan, September 5-8 (2023)
Construction of an environment model for auto-tuning quantum dot devices using model-based reinforcement learning
2023 International Conference on Solid Device and Materials (SSDM 2023), Nagoya, Japan, September 5-8 (2023)
On-demand Single-Electron Source with Acousto-Electric Pulses
21st International Conference on Modulated Semiconductor Structures (MSS-21), Grenoble, France, July 10-14 (2023)
Magic-T design toward reduction of crosstalk effects in RF reflectometry on quantum dot
2023 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2023), July 10-11 (2023)
Evaluation of parasitic circuit component effects on a matching circuit for RF reflectometry of a quantum dot
2023 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2023), July 10 (2023)
2022
Journal articles
Phys. Rev. X 12, 031035 (2022)
The functions of a reservoir offset voltage applied to physically defined p-channel Si quantum dots
Sci. Rep. 12, 10444 (2022)
X-Band GaN Chipsets for Cost-Effective 20W T/R Modules
IEICE Trans. Electron. E105-C, 5, 194-202 (2022)
16 x 8 quantum dot array operation at cryogenic temperatures
Jpn. J. Appl. Phys. 61, SC1040-1-5 (2022)
International conferences
Single-Electron Transport Control for Qubit Initialization in Silicon Quantum Dot Arrays
2022 International Conference on Solid Device and Materials (SSDM2022), September 28(2022)
Temperature dependence of charge noise in a pMOS quantum dot
2022 Silicon Quantum Electronisc Wrokshop, October (2022)
Mixed-mode RF reflectometry for reduction of crosstalk effects
2022 International Conference on Solid Device and Materials (SSDM 2022), September 26(2022)
Long-term characteristic stabilization of a semiconductor double quantum dot based on a multi-dimensional gradient descent technique
2022 International Conference on Solid Device and Materials (SSDM 2022), September 26(2022)
Contact Pad Designs for Semiconductor Qubit Devices for Reducing On-chip Microwave Crosstalk
2022 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2022) A1-4, July 7 (2022)
Single-electron transistor operation of a physically defined silicon quantum dot device fabricated by electron beam lithography employing negative-tone resist
2022 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2022), July in 2022
2021
Journal articles
Sci. Rep. 11, 20039 (2021)
Designs for a two-dimensional Si quantum dot array with spin qubit addressability
Sci. Rep. 11, 19406 (2021)
In-flight distribution of an electron within a surface acoustic wave
Appl. Phys. Lett. 119, 114004 (2021)
Sci. Rep. 11, 5863-1-7 (2021)
Jpn. J. Appl. Phys. 60, SBBI07 (2021)
International conferences
Consideration of stabilization methods of a double quantum dot towards long-term and stable spin-qubit operation
International Symposium on Novel maTerials and quantum Technologies 2021(ISNTT 2021), P1-41, December 15 (2021)
Single-Electron Transport with Acousto-Electric Chirp Pulses
24th International Conference on Electronic Properties of Two-Dimensional Systems/20th International Conference on Modulated Semiconductor Structures (EP2DS-24/MSS-20 Joint Conference), M-4-02, ALL-VIRTUAL Conference, November 2 (2021)
Equivalent Circuit Analysis of RF Reflectometry of Physically Defined Quantum Dot Systems
24th International Conference on Electronic Properties of Two-Dimensional Systems/20th International Conference on Modulated Semiconductor Structures (EP2DS-24/MSS-20 Joint Conference), M-9-04, ALL-VIRTUAL Conference, November 4 (2021)
Phase-encoded radio-frequency reflectometry for parallel readout of quantum dot states
2021 International Conference on Solid State Devices and Materials (SSDM2021), I-1-02, ALL-VIRTUAL Conference, September 6-9(2021)
2020
Journal articles
Sci. Rep. 10, 22202-1-9 (2020)
Appl. Phys. Express 13, 121004-1-4 (2020)
Temperature dependence of hole transport properties through physically defined silicon quantum dots
Appl. Phys. Lett. 117, 094001-1-5 (2020)
Appl. Phys. Lett. 117, 074001-1-5 (2020)
Appl. Phys. Lett. 116, 162106-1-4 (2020)
Quantum non-demolition readout of an electron spin in silicon
Nature Communications 11, 1144-1-7 (2020)
Radio-Frequency-Detected Fast Charge Sensing in Undoped Silicon Quantum Dots
Nano Letters 20, 2, 947-952 (2020)
Pauli spin blockade in a silicon triangular triple quantum dot
Jpn. J. Appl. Phys. 59, SGGI01-1-3 (2020)
Jpn. J. Appl. Phys. 59, SGGI10-1-5 (2020)
Preparing Multipartite Entangled Spin Qubits via Pauli Spin Blockade
Sci. Rep. 10, 3481-1-8 (2020)
International conferences
Readout of Charge States in a Physically Defined PMOS Silicon Quantum Dot via RF Reflectometry
2020 International Conference on Solid State Devices and Materials (SSDM2020), I-6-02, ALL-VIRTUAL Conference, September 27-30 (2020)
Silicon quantum dot devices for spin-based quantum computing
SNW 2020, 5.1, (Virtual), June 13-14 (2020)
2019
Journal articles
Spin–orbit assisted spin funnels in DC transport through a physically defined pMOS double quantum dot
Jpn. J. Appl. Phys. 58 SBBI07 (2019) 2019-04-01
Physically defined triple quantum dot systems in silicon on insulator
Appl. Phys. Lett. 114, 073104 (2019)
International conferences
Observation of bipolar Pauli spin blockade and the few-electron regime in a silicon linearly triple quantum dot
Topical Conference on Quantum Computing 2019 (TCQC2019), Kyoto, Japan, December 17-18(2019)
RF reflectometry on physically defined triangular triple quantum dot
Topical Conference on Quantum Computing 2019 (TCQC2019), Kyoto, Japan, December 17-18(2019)
Fabrication and characterization of physically-defined Si-MOS quantum dots for integration of qubits
Topical Conference on Quantum Computing 2019 (TCQC2019), Kyoto, Japan, December 17-18(2019)
Study on measurement of p-type silicon double quantum dots with FPGA
International Symposium on Hybrid Quantum Systems 2019 (HQS2019), Matsue, Japan, December 1-4 (2019)
Bipolar Pauli spin blockade in a silicon linearly coupled triple quantum dot
2019 International Conference on Solid State Devices and Materials (SSDM2019), E-1-03, Nagoya, Japan, September 3 (2019)
Pauli spin blockade in a silicon triangular triple quantum dot
2019 International Conference on Solid State Devices and Materials (SSDM2019), E-2-02, Nagoya, Japan, September 3 (2019)
Gating function of p-channel silicon quantum dots by offset bias
2019 International Conference on Solid State Devices and Materials (SSDM2019), E-2-03, Nagoya, Japan, September 3 (2019)
Hole spin g-factor in p-type silicon single and double quantum dots
2019 International Conference on Solid State Devices and Materials (SSDM2019), PS-9-01, Nagoya, Japan, September 4 (2019)
2018
Journal articles
Optimized electrical control of a Si/SiGe spin qubit in the presence of an induced frequency shift
npj Quantum Information 4, 54 (2018)
A quantum-dot spin qubit with coherence limited by charge noise and fidelity higher than 99.9%
Nature Nanotechnology, 13, 102–106 (2018). doi:10.1038/s41565-017-0014-x
Fabrication and characterization of physically defined quantum dots on a boron-doped silicon-on-insulator substrate
Jpn. J. Appl. Phys. 57, 04FK03-1-4 (2018) (Corresponding author) https://doi.org/10.7567/JJAP.57.04FK03
International conferences
Physically-defined two silicon double quantum dots coupled electrostatically toward integrated quantum bits
Cambridge Summit 2018, Quantum computer chip fabrication (SESSION-2 ENGG) -1, Murray Edwards College, University of Cambridge, UK, January 4-6, (2018)
2017
Journal articles
Charge sensing and spin-related transport property of p-channel silicon quantum dots
Jpn. J. Appl. Phys. 56, 04CK07-1-4 (2017)
First-principles calculation of a negatively charged boron-vacancy center in diamond
Jpn. J. Appl. Phys. 56, 04CK02-1-4 (2017)
International conferences
Silicon Quantum Dot Devices for Spin Quantum Bits
2nd Global Congress & Expo on Materials Science and Nanoscience, Valencia, Spain, September 26 (2017)
Fabrication and characterization of p-type heavily doped quantum dots
2017 International Conference on Solid State Devices and Materials (SSDM2017), PS-9-9 (Late News), Sendai, Japan, September 21 (2017)
An isotopically-enriched silicon spin qubit with >99.9% fidelity and charge-noise-limited coherence
Sydney, Australia, September 11 (2017)
Physically-defined p-channel silicon double quantum dots with a charge sensor
Sydney, Australia, September 11 (2017)
Charge-noise-limited coherence and three-nines fidelity of an enriched Si/SiGe spin qubit
Silicon Quantum Electronics Workshop 2017, Oregon, USA, August 19 (2017)
Microwave induced frequency shift and its quadrature compensation for Si/SiGe spin qubit
Silicon Quantum Electronics Workshop 2017, Oregon, USA, August 18 (2017)
Hole transport properties in physically defined silicon quantum dots operating at 25 K
The 22nd International Conference on Electronic Properties of Two-Dimensional Systems (EP2DS-22) The Penn State University, Pennsylvania, USA, July 31 – August 4 (2017)
Transport Through Si QDs in Coulomb Blockade Regime: Theory and Experiment
International Workshop on Computational Nanotechnology, Windermere, UK, 5-9 June (2017)
Transport through Si QDs in the devices for quantum information applications: Theory and experiment
UK Quantum Dot Day Meeting 2017, Edinburgh, UK, 13 January (2017)
2016
Journal articles
Coupled Quantum Dots on SOI as Highly Integrated Si Qubits
Tech. Digest Of IEEE International Electron Devices Meeting (IEDM) , p13.3.1-13.3.4 (2016)
Quantum Information Processing in a Silicon-based System
Tech. Digest Of IEEE International Electron Devices Meeting (IEDM) , 34.2.1-34.2.4 (2016)
Electron transport through a single nanocrystalline silicon quantum dot between nanogap electrodes
Applied Physics Letters 109, 213102-1-4 (2016) 2016-11-21, doi: 10.1063/1.4968008 (Corresponding author)
Electron transport in physically-defined double quantum dots on a highly doped silicon-on-insulator substrate
Appl. Phys. Lett. 109, 113109-1-4 (2016) 2016-09-16 (Corresponding author)
A fault-tolerant addressable spin qubit in a natural silicon quantum dot
Science Advanced, 2, 8, e1600694-1-6 (2016) 2016-08-12
Synthesis of Ge/Si core/shell nanowires with suppression of branch formation
Applied Physics Express, 9 (5), 055504 (2016) 2016-04-08
International conferences
Coupled Quantum Dots on SOI as Highly Integrated Si Qubits
2016 IEEE International Electron Devices Meeting (IEDM), 13.3, San Francisco, USA, 6 Dec. (2016)
Quantum Information Processing in a Silicon-based System
2016 IEEE International Electron Devices Meeting (IEDM), 34.2, San Francisco, USA, 7 Dec. (2016)
Electrical Properties and Equivalent-Circuit Model of Physically-Defined Silicon Triple Quantum Dots Charged with Few Electrons
2016 Materials Research Society Fall meeting and exhibit, EM1.1.06, Boston, USA, 28 November (2016)
Centre resonance frequency shift of a strongly driven silicon quantum dot spin qubit
The international workshop on Nano-Spin Conversion Science and Quantum Spin Dynamics (NSCS-QSD 2016) Tokyo, Japan, 12-15, October (2016)
High-fidelity spin control in an enriched Si/SiGe quantum dot with a micromagnet
The international workshop on Nano-Spin Conversion Science and Quantum Spin Dynamics (NSCS-QSD 2016) Tokyo, Japan, 12-15, October (2016)
First principle calculation of a negatively charged boron-vacancy center in diamond for highly-sensitive magnetic sensor applications
2016 International Conference on Solid State Devices and Materials (SSDM2016), M-4-04 (Late News) Tsukuba, Japan, 26-29 September (2016)
Single hole transport and magnetic field dependence of Pauli spin blockade in p-channel silicon double quantum dots
2016 International Conference on Solid State Devices and Materials (SSDM2016), M-2-05 (Late News), Tsukuba, Japan, 26-29 September (2016)
Charge qubit states in isolated silicon structures
Quantum Science Symposium Europe 2016, Cambridge, UK (21st July 2016) (INVITED)
Comparison of badminton long serve between skilled players and bigginers in physical education class
The 21st annual congress of the European College of Sport Science, Vienna, Italy, 06-09, July (2016)
Fabrication and characterization of physically-defined quantum dots in an ultrathin silicon-on-insulator layer
P-070, Silicon Quantum Electronics Workshop 2016, Delft, Netherlands, 13-14 June (2016)
Magnetic field dependence of Pauli spin blockade in p-channel silicon double quantum dots
P-041, Silicon Quantum Electronics Workshop 2016, Delft, Netherlands, 13-14 June (2016)
Charge qubit states in quantum dots : effect of doping on operations and coherence
P-057, Silicon Quantum Electronics Workshop 2016, Delft, Netherlands, 13-14 June (2016)
Measurement of charge states in Si/SiGe multiple quantum dots
P-054, Silicon Quantum Electronics Workshop 2016, Delft, Netherlands, 13-14 June (2016)
Multiplexed reflectometry measurement of a gate-defined Si-MOS quantum dot
P-050, Silicon Quantum Electronics Workshop 2016, Delft, Netherlands, 13-14 June (2016)
AC Stark effect and optimal control of a strongly driven Si/SiGe quantum dot spin qubit
O-052, Silicon Quantum Electronics Workshop 2016, Delft, Netherlands, 13-14 June (2016)
Charge qubit states in quantum dots : effect of doping on operations and coherence
The 9th International Conference on Quantum Dots (QD2016) PM-101, Jeju, Korea, 22-27 May (2016)
Controlling the asymmetric line-shape of charge-trapped induced resonances in a single quantum dot
The 9th International Conference on Quantum Dots (QD2016), PM-106, Jeju, Korea, 22-27 May (2016)
Spin-based quantum information devices using physically-defined silicon quantum dots
A06, EMN Meeting on Quantum 2016 (EMN2016) Phuket, Thailand, 08-10, April (2016)
CO2 Reduction with p-Type 3C-SiC Photo-Electrodes
The 2016 MRS Spring Meeting, EE2.7.06, Phoenix, Arizona, USA, 31 March (2016)
Spin Quantum Information Technologies Using Group IV Materials
1st International Engineering Forum 2016, Feb 20–22, Taipei, Taiwan (2016)
2015
Journal articles
Improvement of Fluorescence Intensity of Nitrogen Vacancy Centers in Self-Formed Diamond Microstructures
Appl. Phys. Lett. 107, 163102-1-4 (2015) 2015-10-20
Formation of three-dimensionally integrated nanocrystalline silicon particles by dip-coating method
Jpn. J. Appl. Phys. 54, 105001-1-5 (2015), 2015-09-25
Quantum dots in single electron transistors with ultrathin silicon-on-insulator structures
Appl. Phys. Lett. 107, 013102-1-4 (2015), 2015-07-06 (Corresponding author)
Ge/Si core/shell nanowires with controlled low temperature grown Si shell thickness
Phys. Status Solidi A 212, 7, 1578–1581 (2015), 2015-06-15 10.1002/pssa.201532340
Lithographically-defined few-electron silicon quantum dots based on a silicon-on-insulator substrate
Appl. Phys. Lett. 106, 083111-1-5 (2015), 2015-02-26 (Corresponding author)
Back-action-induced excitation of electrons in a silicon quantum dot with a single electron transistor charge sensor
Appl. Phys. Lett. 106, 053119-1-4 (2015) 2015-02-06 (Corresponding author)
Analysis of effect of gate oxidation at SiC MOS interface on threshold-voltage shift using deep-level transient spectroscopy
Jpn. J. Appl. Phys. 54, 04DP05-1-6 (2015), 2015-01-28
International conferences
Devices Architectures and Technology for Quantum Computing
228th ECS Meeting, Phoenix, Arizona, USA, 11-15, October (2015)
Measurement of the SiO2/SiC interface state density in a wide energy-level range using capacitance transient spectroscopy
16th International Conference on Silicon Carbide and Related Materials (ICSCRM2015), Th-P-25, Giardini Naxos, Italy, 4-9 October, (2015) (poster)
Wireless manipulation of quantum states in silicon isolated double quantum dots
Silicon quantum information processing : scaling up, Cambridge, UK, 11 September 2015 (poster)
Charge Qubits in Doped Quantum Dots : Effects on Computation and Coherence
Ninth International Conference on Quantum, Nano/Bio, and Micro Technologies , Venice, Italy, 23-28 August 2015 (oral)
A strongly driven single-spin qubit in a Si/SiGe double quantum dot with a micro-magnet
SpinTech VIII, Basel, Switzerland, August 10–13, 2015. (poster)
Improvement of photon collection efficiency from a nitrogen vacancy center in a self-formed diamond microstructure
Diamond Quantum Sensing Workshop 2015, P-12, August 5-7, Takamatsu, Japan (2015) poster
Physically-defined silicon triple quantum dots in metal-oxide-semiconductor structures
Silicon Quantum Electronics Workshop 2015, P-23, Takamatsu, Japan, 4 August 2015 (poster)
Wireless manipulation of quantum states in silicon isolated double quantum dots
Silicon Quantum Electronics Workshop 2015, Takamatsu, Japan, 4 August 2015 (oral)
Characterization of physically-defined double quantum dots on highly-doped silicon substrate
Silicon Quantum Electronics Workshop 2015, P-19, Takamatsu, Japan, 4 August 2015 (poster)
Detection of electronic states in doped silicon double quantum dot
Silicon Quantum Electronics Workshop 2015, P-20, Takamatsu, Japan, 4 August 2015 (poster)
Physically-defined quantum dots fabricated on silicon-on-insulator substrate
Silicon Quantum Electronics Workshop 2015, P-15, Takamatsu, Japan, 4 August 2015 (poster)
Fabrication and characterization of gate-defined small Si-MOS quantum dot device
Silicon Quantum Electronics Workshop 2015, P-11, Takamatsu, Japan, 4 August 2015 (poster)
Improved design and fabrication for Si/SiGe quantum dots with increased valley-splitting
Silicon Quantum Electronics Workshop 2015, P-49, Takamatsu, Japan, 4 August 2015 (poster)
Fast addressable single-spin qubits in a Si/SiGe double quantum dot with a micro-magnet
Silicon Quantum Electronics Workshop 2015, VI-6, Takamatsu, Japan, 4 August 2015 (oral)
Physically-Defined Few-Electron Triple Quantum Dots in Metal-Oxide-Semiconductor Structures
21st International Conference on Electronic Properties of Two-Dimensional Systems (EP2DS-21), Mo-PE-30, Sendai, Japan July 2015 (poster)
Integration of Quantum Dots on Ultrathin Silicon-on-Insulator Film
21st International Conference on Electronic Properties of Two-Dimensional Systems (EP2DS-21), Th-PE-34, Sendai, Japan July 2015 (poster)
Few-Electron and Few-Hole Regimes in Silicon Double Quantum Dots
21st International Conference on Electronic Properties of Two-Dimensional Systems (EP2DS-21), Th-PE-28, Sendai, Japan July 2015 (poster)
Wireless manipulation of quantum states in silicon isolated double quantum dots
21st International Conference on Electronic Properties of Two-Dimensional Systems (EP2DS-21), Tu-PE-97, Sendai, Japan 26-31 July 2015 (poster) 7/28
Transport and thermoelectric properties in Ge/Si core/shell nanowires
the 15th International Conference on Modulated Semiconductor Structures (MSS-17), Mo-PM-11, Sendai, Japan, July 2015 (poster) 7/27
A Ge/Si core/shell nanowire with controlled low temperature grown Si shell thickness
20th Biennial European Conference on Chemical Vapor Deposition (EuroCVD20), Sempach, Switzerland, July 13-17, 2015 (oral) Invited Presentation on July 15
Fabrication and characterization of physically-defined double quantum dots without unintentional localized states on highly-doped silicon substrate
The 2015 IEEE Silicon Nanoelectronics Workshop (SNW2015) 5-7, Kyoto, Japan June 14-15, 2015 (poster)
Fabrication of a highly controllable Si-MOS quantum dot device
The 2015 IEEE Silicon Nanoelectronics Workshop (SNW2015) 5-10, Kyoto, Japan June 14-15, 2015 (poster)
Charge sensing of p-channel double quantum dots fabricated on (110) silicon substrate
The 2015 IEEE Silicon Nanoelectronics Workshop (SNW2015) 7-5, Kyoto, Japan June 14-15, 2015 (oral)
Fabrication and Thermo-electric Properties of Ge/Si Core/Shell Nanowires
11th International Nanotechnology Conference on Communication and Cooperation (INC11), Fukuoka, Japan May 2015 (poster)
Coupled Si quantum dot devices
11th International Nanotechnology Conference on Communication and Cooperation (INC11), Fukuoka, Japan May 2015 (poster) Japan Nano Day Best poster award
Collection efficiency improvement of NV centers by selective growth of diamond
5.15, Hasselt Diamond Workshop 2015, February 25, 2015 Hasselt Belgium, 2015-02-25
2014
Journal articles
Fabrication and characterization of p-channel Si double quantum dots
Appl. Phys. Lett. 105, 113110 (2014) 2014-09-18
Charge noise analysis of metal oxide semiconductor dual-gate Si/SiGe quantum point contacts
J. Appl. Phys. 115, 203709-1-4 (2014) 2014-05-27
Surface passivation of germanium nanowires using Al2O3 and HfO2 deposited via atomic layer deposition (ALD) technique
Jpn. J. Appl. Phys., 53, 06JG04 (6 pages), 2014-05-12
GHz photon-activated hopping between localized states in a silicon quantum dot
New J. Phys. 16, 013016-1-18 (2014) 2014-01-13
International conferences
Few-carrier regimes in lithographically-defined Si quantum dots
3rd International Conference and Exhibition on Materials Science & Engineering, October 07, 2014 San Antonio, USA (invited) 2014-10-07
Effect of Gate Oxide Process at SiC-MOS Interface on Threshold Voltage Shift Analyzed by DLTS
2014 International Conference on Solid State Devices and Materials (SSDM 2014), PS-14-13, September 10 (2014), Tsukuba, Japan 2014-09-10
Charge Manipulations in Si-Based Quantum Dot Qubit Devices with Single Electron Transistors: Theory and Experiment
2014 International Conference on Solid State Devices and Materials (SSDM 2014), H-7-2, September 11 (2014), Tsukuba, Japan 2014-09-11
Ultrathin Silicon-on-Insulator Structures with Integrated Single Electron Transistors: theory and experiment
UK Semiconductor 2014, Sheffield, UK (2014)
Perpendicular Magnetic Field Dependence of Triangular Triple Silicon Quantum Dot System
The 2014 IEEE Silicon Nanoelectronics Workshop (SNW2014) P1-21, Honolulu, USA, June 2014 (poster)
Manipulation of Silicon Quantum Dots and Isolated Structures using GHz Photons
The 2014 IEEE Silicon Nanoelectronics Workshop (SNW2014) P1-31 Honolulu, USA, June 2014 (poster)
Fabrication and Characterization of Silicon Double Quantum Dots for Quantum Information Devices
Collaborative Conference on Materials Research (CCMR) 2014, Incheon, Korea, 2014-06-26
Fabrication and characterization of silicon double quantum dots in n-MOS and p-MOS structures
M52, International Conference on Quantum Dots (QD 2014) Pisa, Italy, 2014-05-12
Fabrication of Si quantum dots using SF6 dry etching technique
M70, International Conference on Quantum Dots (QD 2014) Pisa, Italy, 2014-05-12
Manipulating quantum states with GHz photons in silicon quantum dots and isolated structures
1-1, International Conference on Quantum Dots (QD 2014) Pisa, Italy, 2014-05-11
2013
Journal articles
Microscopic study of germanium nanowires grown via gold-catalyzed chemical vapor deposition below the eutectic temperature
Journal of Crystal Growth 384, 77-81 (2013) 2013-09-17
Optimization and Tunnel Junction Parameters Extraction of Electro-statically Defined Silicon Double Quantum Dots Structure
Jpn. J. Appl. Phys. 52 (2013) 081301 (5 pages), 2013-07-12
Characterization and suppression of low-frequency noise in Si/SiGe quantum point contacts and quantum dots
Appl. Phys. Lett. 102, 123113-1-3 (2013), 2013-03-29
Channel Length Scaling and Surface Nitridation of Silicon Nanocrystals for High-Performance Electron Devices
Jpn. J. Appl. Phys. 52 (2013) 04CH08 (4 pages), 2013-03-21
Dual Function of Single Electron Transistor Coupled with Double Quantum Dot: Gating and Charge Sensing
Jpn. J. Appl. Phys. 52 (2013) 04CJ01 (4 pages), 2013-02-20
International conferences
Silicon double quantum dots in metal-oxide-semiconductor structures
International Symposium on Advanced Nanodevices and Nanotechnology (ISANN 2013), December 12 (2013), Kauai, Hawaii (2013)
Silicon spin-based quantum information devices
3rd International Conference on Nanotek and Expo (Nanotek2013), December 06 (2013), Las Vegas, USA (invited)
Development of quantum dot devices toward quantum computers
2013 IEEE International Conference on Electronics Technology and Industrial Development (ICE-ID 2013), October 23 (2013), Bali Indonesia (invited)
Reduction of Charge Noise in Dual-Gate Si/SiGe Quantum Point ContactMechanisms
2013 International Conference on Solid State Devices and Materials (SSDM 2013), E-2-5, September 25, Fukuoka, Japan (2013)
Direct measurement of the valley splitting in a few-electron silicon quantum dot using charge sensor source-drain bias spectroscopy
20th International Conference on Electronic Properties of Two-Dimensional Systems (EP2DS-20) ThP65, July 4 (2013) Wroclaw, Poland
Few-electron silicon single and double quantum dots fabricated in a metal-oxide-semiconductor structure
16th International Conference on Modulated Semiconductor Structures(MSS-16) ThP67, July 4 (2013) Wroclaw, Poland
Silicon quantum dot devices toward spin-based quantum information processing
Collaborative Conference on 3D & materials Research 2013, June 27 (2013) Jeju, Korea (invited)
Charge-Noise-Free Lateral Quantum Dot Devices with Undoped Si/SiGe Wafer
the 12th Asia Pacific Physics Conference (APPC12) A2-PMo-3, Makuhari, Japan, (2013), 2013-07-15
High Density Vertical Silicon Nanowires for Photodetector Applications
IEEE EDS WIMNACT 37: Future Trend of Nanodevices and Photonics, P-1, Tokyo, Japan (2013), 2013-02-18
Fabrication of MOS structure gate-defined Si/SiGe quantum dot device
IEEE EDS WIMNACT 37: Future Trend of Nanodevices and Photonics, P-3, Tokyo, Japan (2013), 2013-02-18
Observation of few-hole regime through p-channel Si double quantum dots
IEEE EDS WIMNACT 37: Future Trend of Nanodevices and Photonics, P-4, Tokyo, Japan (2013), 2013-02-18
Two-electron silicon double quantum dots fabricated for spin-based qubit application
IEEE EDS WIMNACT 37: Future Trend of Nanodevices and Photonics, P-5, Tokyo, Japan (2013), 2013-02-18
Synthesis of Ge nanowires far below AuGe eutectic temperature, their characterisation and device fabrication
IEEE EDS WIMNACT 37: Future Trend of Nanodevices and Photonics, P-6, Tokyo, Japan (2013), 2013-02-18
Observation of electron transitions in triple quantum dot by using charge sensor
IEEE EDS WIMNACT 37: Future Trend of Nanodevices and Photonics, P-7, Tokyo, Japan (2013), 2013-02-18
Demonstration of large charging energy in quantum dots fabricated on ultrathin SOI
IEEE EDS WIMNACT 37: Future Trend of Nanodevices and Photonics, P-8, Tokyo, Japan (2013), 2013-02-18
Micro magnets on lithographically-defined Si double quantum dots for electron spin resonance
IEEE EDS WIMNACT 37: Future Trend of Nanodevices and Photonics, P-9, Tokyo, Japan (2013), 2013-02-18
Fabrication and characterization of bottom-up Si nanowire
IEEE EDS WIMNACT 37: Future Trend of Nanodevices and Photonics, P-10, Tokyo, Japan (2013), 2013-02-18
Fabrication of Ge/Si core/shell nanowires using size controlled Au nanoparticles as Vapor-Liquid-Solid growth catalysts
IEEE EDS WIMNACT 37: Future Trend of Nanodevices and Photonics, P-11, Tokyo, Japan (2013), 2013-02-18
Terahertz detection with antenna-coupled heavily P-doped Si quantum dots
IEEE EDS WIMNACT 37: Future Trend of Nanodevices and Photonics, P-14, Tokyo, Japan (2013), 2013-02-18
Fabrication and characterization of silicon quantum dots toward spin-based quantum information devices
International Workshop on Silicon Quantum Electronics, P31, Villard-de-Lans, France (2013), 2013-02-07
Lithographically-defined silicon few-electron quantum dots fabricated on a silicon-on-insulator substrate
International Workshop on Silicon Quantum Electronics, P19, Villard-de-Lans, France (2013), 2013-02-07
Multifunctional lithographically-defined Si quantum dots for spin qubits
International Workshop on Silicon Quantum Electronics, P33, Villard-de-Lans, France (2013) 2013-02-07
Top-down and bottom-up silicon quantum dots for qubit application
Quantum Dot Day 2013, O14, University of Nottingham, UK (2013) 2013-01-10
2012
Journal articles
Low-Temperature Growth of Ge Nanowires by Vapor-Liquid-Solid Chemical Vapor Deposition
ECS Transactions 45, No.3, 17-29 (2012)
Magnetic field dependence of Pauli spin blockade: A window into the sources of spin relaxation in silicon quantum dots
Phys. Rev. B 86, 115322 (2012)
Photoluminescence of Nanocrystalline Silicon Quantum Dots with Various Sizes and Various Phosphorus Doping Concentrations prepared by Very High Frequency Plasma
Jpn. J. Appl. Phys. accepted (2012)
A Multi-purpose Electrostatically Defined Silicon Quantum Dots
Jpn. J. Appl. Phys. 51, 2, 02BJ10 (2012)
Key capacitive parameters for designing single-electron transistor charge sensors
J. Appl. Phys. 111, 093715 (2012)
Localization effects in the tunnel barriers of phosphorus-doped silicon quantum dots
AIP Advances 2, 2, 022114 (2012)
International conferences
Dual Function of Charge Sensor: Charge Sensing and Gating
2012 International Conference on Solid State Devices and Materials (SSDM 2012), September 25, Kyoto, Japan (2012)
Fabrication and Characterization of pChannel Si Double-Quantum-Dot Structures
2012 International Conference on Solid State Devices and Materials (SSDM 2012), September 25, Kyoto, Japan (2012)
Scaling of Channel Length for Highly Conductive Silicon Nanocrystal Films
2012 International Conference on Solid State Devices and Materials (SSDM 2012), September 25, Kyoto, Japan (2012)
Experimental Observation of Record-high Electron Mobility of Greater than 1100 cm2V-1s-1 in Unstressed Si MOSFETs and Its Physical Mechanisms
2012 International Conference on Solid State Devices and Materials (SSDM 2012), September 25, Kyoto, Japan (2012)
Charge noise characterization and reduction in Si/SiGe quantum devices
31st International Conference on the Physics of Semiconductor (ICPS2012), 64.16-158, August 2, Zurich, Switzerland (2012)
Microwave effects on silicon quantum dots
31st International Conference on the Physics of Semiconductor (ICPS2012), 37.4-261, July 31, Zurich, Switzerland (2012)
Fabrication and characterization of Si/SiGe quantum dots with capping gate
The 2012 IEEE Silicon Nanoelectronics Workshop (SNW2012), June 2012, Honolulu, Hawaii
Charge sensing of a Si triple quantum dot system using single electron transistors
The 2012 IEEE Silicon Nanoelectronics Workshop (SNW2012), June 2012, Honolulu, Hawaii
Fabrication and evaluation of heavily P-doped Si quantum dot and back-gate induced Si quantum dot
The 2012 IEEE Silicon Nanoelectronics Workshop (SNW2012), June 2012, Honolulu, Hawaii
Silicon quantum dot devices toward electron spin quantum bits
8th International Nanotechnology Conference on Communication and Cooperation (INC8) May 2012, Tsukuba, Japan
Fabrication and Characterization of Ge Nanowires Prepared at Low Temperatures by Vapour-Liquid-Solid Chemical Vapour Deposition
8th International Nanotechnology Conference on Communication and Cooperation (INC8) May 2012, Tsukuba, Japan
Electrical and Optical Properties of Silicon Nanocrystals Prepared by Very High Frequency Plasma Deposition System
8th International Nanotechnology Conference on Communication and Cooperation (INC8) May 2012, Tsukuba, Japan
2011
Journal articles
Removal of Surface Oxide Layer from Silicon Nanocrystals by Hydrogen Fluoride Vapor Etching
Jpn. J. Appl. Phys., 50, (2011) 115002 (4 pages)
Pauli Spin Blockade and Influence of Hyperfine Interaction in Vertical Quantum Dot Molecule with Six-electrons
J. Phys. Soc. Jpn. 80, (2011) 023701
Simulation study of charge modulation in coupled quantum dots in silicon
Japanese Journal of Applied Physics, April 2011 vol .50 04DJ05 (4 pages)
Study on Device Parameters of Carbon Nanotube Field Electron Transistors to Realize Steep Subthreshold Slope of Less than 60 mV/Decade
Jpn. J. Appl. Phys. 50 (2011) 04DN01 (4 pages)
Growth of Narrow and Straight Germanium Nanowires by Vapor-Liquid-Solid Chemical Vapor Deposition
Jpn. J. Appl. Phys. 50 (2011) 105002 (6 pages)
Germanium Nanowires with 3-nm-Diameter Prepared by Low Temperature Vapour-Liquid-Solid Chemical Vapour Deposition
J. Nanosci. Nanotechnol. 11, 8163-8168 (2011)
Numerical simulation study of electrostatically defined silicon double quantum dot device
Journal of Applied Physics 110, 054511 -1-4 (2011)
Enhancement of Rashba coupling in vertical In0.05Ga0.95As/GaAs quantum dots
Phys. Rev. B 84, 085325 (2011)
Detection of variable tunneling rates in silicon quantum dots
Appl. Phys. Lett. 98, 13, 133506 (2011)
Size Reduction and Phosphorus Doping of Silicon Nanocrystals Prepared by a Very High Frequency Plasma Deposition System
Japanese Journal of Applied Physics, 50, (2011) 02500
Experimental study on subband structures and hole transport in (110) Si p-type metal-oxide-semiconductor field-effect transistors under high magnetic field
Journal of Applied Physics, February 2011 vol.109, pp.034505
International conferences
Influence of Backgate Voltage on Spin Accumulation in a Silicon Nanowire Spin Valve
24th International Microprocesses and Nanotechnology Conference (MNC 2011), 26P-7-143L, October 2011, Kyoto, Japan
Microscopic Study of the Germanium Nanowires grown at Low-temperatures by Au-catalysed Chemical Vapour Deposition
24th International Microprocesses and Nanotechnology Conference (MNC 2011), 27B-8-4, October 2011, Kyoto, Japan
Utilizing 2D figures of DNA polymer for self-assembly applications on silicon platform
International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices (IS-AHND) 2011, P-1, October 2011, Meguro, Japan
Transport Simulation of an Electrostatically Defined Silicon Double Quantum Dot Device
International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices (IS-AHND) 2011, P-2, October 2011, Meguro, Japan
Evaluation of Electrical and Optical Property and High-Density Assembly of Nano-Crystalline Silicon Dot Array for Device Application
International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices (IS-AHND) 2011, P-3, October 2011, Meguro, Japan
Low-Temperature Magnetoresistance Studies of Silicon Nanowires with Permalloy Leads
International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices (IS-AHND) 2011, P-4, October 2011, Meguro, Japan
Charge detection techniques in Si double quantum dots
International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices (IS-AHND) 2011, P-5, October 2011, Meguro, Japan
Synthesis of small-diameter Ge NW at low temperature for electron device application
International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices (IS-AHND) 2011, P-6, October 2011, Meguro, Japan
Photoluminescence of Nanocrystalline Silicon Quantum Dots prepared by VHF Plasma
International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices (IS-AHND) 2011, P-8, October 2011, Meguro, Japan
Electron transport in a single silicon nanocrystal between nanogap electrodes
International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices (IS-AHND) 2011, P-9, October 2011, Meguro, Japan
Pd Schottky gate operation voltage of Si/SiGe quantum-point-contact
International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices (IS-AHND) 2011, P-10, October 2011, Meguro, Japan
Fabrication of few-electron silicon quantum dot devices based on an SOI substrate with a top gate contact
International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices (IS-AHND) 2011, P-11, October 2011, Meguro, Japan
Development of silicon quantum dot devices toward spin quantum bits
International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices (IS-AHND) 2011, P-12, October 2011, Meguro, Japan
Direct Observation of Subband Structures in (110) Si pMOSFETs under High Magnetic Field and Its Impact on Hole Transport
International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices (IS-AHND) 2011, October 2011, Meguro, Japan
A Multi-purpose Electrostatically Defined Silicon Quantum Dot Structure
2011 International Conference on Solid State Devices and Materials (SSDM 2011), P-9-7, September 2011, Nagoya, Japan
Rashba spin-orbit interaction due to wavefunction penetration in In0.05Ga0.95As/GaAs quantum dot
2011 International Conference on Solid State Devices and Materials (SSDM 2011), J-7-1, September 2011, Nagoya, Japan
Observation of few-electron regime and suppression of inter-dot tunneling in silicon quantum dots
the International Conference on Quantum Information Processing and Communication 2011 (QIPC 2011), CS-8, September 2011, Zurich, Switzerland
Charge sensing in silicon quantum dots for quantum computation
the International Conference on Quantum Information Processing and Communication 2011 (QIPC 2011), September 2011, Zurich, Switzerland
Observation of few-electron regime and suppression of inter-dot tunneling in silicon quantum dots
the International Conference on Quantum Information Processing and Communication 2011 (QIPC 2011), September 2011, Zurich, Switzerland
Germanium nanowires with 3-nm-diameter prepared by temperature (260C) vapour-liquid-solid chemical vapour deposition
EuroCVD 18 conference, September 2011, Kinsale, Ireland
Electrical Property of Nano-Crystalline Silicon Thin-Films Prepared by Very High Frequency Plasma Deposition System
24th International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS 24) August 2011 Nara
Photoluminescence of Nanocrystalline ICANS-24Silicon Quantum Dots Prepared by VHF Plasma Cell
24th International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS 24) August 2011 Nara
Observation of single-electron regime in a silicon quantum dot by a single-electron transistor
the 19th International Conference on Electronic Properties of Two-Dimensional Systems (EP2DS 19), July 2011, Florida, USA
Triangularly-positioned silicon triple quantum dots
the 15th International Conference on Modulated Semiconductor Structures (MSS 15), July 2011, Florida, USA
An apparent metal-insulator transition in a phosphorous doped silicon single electron transistor
IEEE Silicon Nanoelectronics Workshop, 5-16, June 2011, Kyoto
Pd Schottky gate operation voltage of Si/SiGe quantum-point-contact
IEEE Silicon Nanoelectronics Workshop, 5-17, June 2011, Kyoto
Simulation Study of Electrostatically Defined Silicon Double Quantum Dot Device
IEEE Silicon Nanoelectronics Workshop, 5-12, June 2011, Kyoto
Charge Detection in Silicon Quantum Dots Coupled in Parallel
IEEE Silicon Nanoelectronics Workshop, June 2011, Kyoto
Electrical Property of Nano-Crystalline Silicon Thin-Films Transistors Prepared by Very High Frequency Plasma Deposition System
IEEE Silicon Nanoelectronics Workshop, 5-6, June 2011, Kyoto
Observation of Pauli-Spin Blockade and Single-Electron Regime in Silicon Coupled Quantum Dots
7th International Nanotechnology Conference on Communication and Cooperation (INC7), May 2011, Albany
Evaluation of Electrical and Optical Property and High-Density Assembly of Nano-Crystalline Silicon Dot Array for Device Application
7th International Nanotechnology Conference on Communication and Cooperation (INC7), May 2011, Albany
Synthesis of small-diameter Ge NW at low temperature for electron device application
7th International Nanotechnology Conference on Communication and Cooperation (INC7), May 2011, Albany
Laser Annealing of Silicon Nanocrystals Thin-films Prepared by VHF Plasma Deposition System
Materials Research Society April 2011 San Francisco
Constructing Templates for One-dimensional Nanostructure Using DNA Origami
Materials Research Society, April 2011, San Francisco
Laser Annealing of Silicon Nanocrystals Thin-films Prepared by VHF Plasma Deposition System
Materials Research Society, April 2011, San Francisco
2010
Journal articles
Acoustic phonon effects on telecommunication-band exciton Rabi oscillation
Physica Status Solidi (c) 7, 10, (2010) 2578-2581
Suspended Quantum Dot Fabrication on a Heavily Doped Silicon Nanowire by Suppressing Unintentional Quantum Dot Formation
Jpn. J. Appl. Phys. 49 (2010) 044001
Experimental Observation of Enhanced Electron-Phonon Interaction in Suspended Si Double Quantum Dots
Jpn. J. Appl. Phys. 49 (2010) 045203
Fabrication and characterization of a vertical pillar structure including a self-assembled quantum dot and a quantum well
Physica E 42, 10 (2010)
Two-photon control of biexcitonic population in telecommunication-band quantum dot
Appl. Phys. Express 3 064401 (2010)
International conferences
Anomalous Electron Mobility in Extremely-Thin SOI (ETSOI) Diffusion Layers with SOI Thickness of Less Than 10 nm and High Doping Concentration of Greater Than 1×1018cm-3
IEEE International Electron Devices Meeting (IEDM), 3.3, San Francisco, USA, (Dec 2010)
Silicon Quantum Dots for Spin-Based Quantum Information Processing
2nd Japanese-Russian young scientists conference on nano-materials and nano-technology, Tokyo, Japan, (September 2010)
Simulation study of charge modulation in coupled quantum dots in silicon
2010 International Conference on Solid State Devices and Materials (SSDM 2010), F-4-2, Tokyo, Japan, (September 2010)
Preparation of SOI-based Double Quantum Dots Structure Defined by Geometry and Electrostatically
2010 International Conference on Solid State Devices and Materials (SSDM 2010), F-4-3, Tokyo, Japan, (September 2010)
Study on Device Parameters of Carbon Nanotube FETs to RealizeSteep Subthreshold Slope of less than 60 mV/decade
2010 International Conference on Solid State Devices and Materials (SSDM 2010), J-1-3, Tokyo, Japan, (September 2010)
Magnetic field dependence of a leakage current in Pauli-spin blockade regime of silicon double quantum dots
School and conference on Spin-based quantum information processing, A48, Konstanz, Germany, (August 2010)
Realization of lithographically-defined silicon quantum dots without unintentional localized potentials
30th International Conference on Physics of Semiconductors (ICPS-30), TuB 2-5, Seoul, Korea, (July 2010)
Spin-related tunneling in lithographically-defined silicon quantum dots
2010 IEEE Silicon Nanoelectronics Workshop, 7.3, Honolulu, USA, (June 2010)
Single-electron energy dissipation processes mediated by slab mode phonons observed for suspended silicon double quantum dots
2010 IEEE Silicon Nanoelectronics Workshop, P1.24, Honolulu, USA, (June 2010)
Resonant tunnelling between a self-assembled InAs quantum dot and an electrically-defined InGaAs quantum dot
the 6th International Conference on Semiconductor Quantum Dots (QD2010), P. 58, Nottingham UK, (April 2010)
Pauli spin blockade in a lithographically-defined silicon double quantum dot
International Symposium on Quantum Nanostructures and Spin-related Phenomena (QNSP2010), ThA-6, Tokyo (March 2010)
Hyperfine interaction in a vertical double quantum dot
International Symposium on Quantum Nanostructures and Spin-related Phenomena (QNSP2010), TuM-3, Tokyo (March 2010)
Magnetic field dependence of resonant tunneling between an InAs quantum dot and an InGaAs quantum dot
International Symposium on Quantum Nanostructures and Spin-related Phenomena (QNSP2010), P-34, Tokyo (March 2010)
Inelastic single-electron tunneling assisted by confined phonons observed for suspended silicon double quantum dots
IOP Quantum Dot Meeting (QDCAM2010), Cambridge, UK (January 2010)
2009
Journal articles
Quantitative estimation of exchange interaction energy using two-electron vertical double quantum dots
Phys. Rev. Lett. 102, 146802 (2009)
Control of Inter-dot Electrostatic Coupling by a Side Gate in Silicon Double Quantum Dot Operating at 4.5 K
Appl. Phys. Express. 2, (9), 095002 (2009)
Fine and Large Coulomb Diamonds in a Silicon Quantum Dot
Jpn. J. Appl. Phys. 48 (6) 06FF15-1-6 (2009)
Biexcitonic photocurrent induced by two-photon process at a telecommunication band
Phys. Stat. Sol.C 6, 6, 1445-1448 (2009)
Pauli-spin blockade in a vertical double quantum dot holding two to five electrons
Journal of Physics: Conference Series, 150, 022043, (2009)
International conferences
Direct Observation of Subband Structures in (110) pMOSFETs under High Magnetic Field: Impact of Energy Split between Bands and Effective Masses on Hole Mobility
IEEE International Electron Devices Meeting (IEDM), Session 19, 19.7, Baltimore, December 7-9, (2009)
Improvements of transport properties in silicon quantum dots
International Symposium on Quantum Nanophotonics and Nanoelectronics (ISQNN 2009), ThP-4, pp.76, Tokyo, Japan (November 2009)
Temperature Dependence of Excitonic Rabi Oscillation in Single Telecommunication-Band Quantum Dot
International Symposium on Quantum Nanophotonics and Nanoelectronics (ISQNN 2009), ThP-15, Univ. of Tokyo, Tokyo, Japan, (November 2009)
Removal of Surface Oxide Layer from Silicon Nanocrystals by HF Vapor Etching
22nd Int. Microprocess and Nanotechnology Conference (MNC 2009), Sapporo, Japan (November 2009)
Spin blockade properties of weakly coupled quantum dots in the presence of near orbital degeneracy
International Symposium on Advanced Nanostructures and nano-Devices, Kaanapali, Maui, Hawaii (November 2009)
Electron-phonon interaction in suspended Si double quantum dots
22nd Int. Microprocess a Nanotechnology Conference (MNC 2009), Sapporo, Japan, (November 2009)
Fabrication and characterization of silicon double quantum dots towards spin qubits
G-COE PICE International Symposium on Silicon Nano Devices in 2030, Tokyo, Japan (October 2009)
Electron transport through coupled Si quantum dots toward quantum information devices
G-COE PICE International Symposium on Silicon Nano Devices in 2030, (October 2009)
Suspended quantum dot devices for sensor or quantum bit applications
G-COE PICE International Symposium on Silicon Nano Devices in 2030, (October 2009)
Phosphorous-Doping in Silicon Nanocrystals by using VHF Plasma
G-COE PICE International Symposium on Silicon Nano Devices in 2030, (October 2009)
Acoustic Phonon Effects on Telecommunication Band Exciton Rabi Oscillation
36 th International Symposium on Compound Semiconductors (ISCS 2009), 19.4, University of California Santa Barbara, USA, (August 2009)
Resonant tunneling in a vertical pillar structure including a self-assembled quantum dot coupled with a quantum well
14th International Conference on Modulated Semiconductor Structures (MSS-14), M1g, pp12 Kobe, Japan (July 2009)
Additional research activities
The complete research record (Japanese) also lists domestic conference presentations, invited talks, awards, books, review articles and press coverage.